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FPD22501.5W Power pHEMT
FPD2250
1.5W POWER pHEMT
Package Style: Bare Die
Product Description
The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25mx2250m Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD2250 is also available in the low-cost plastic SOT89 package.
Features
32dBm Linear Output Power at 12GHz 7.5dB Power Gain at 12GHz 42dBm OIP3 45% Power-Added Efficiency
Applications
Optimum Technology Matching(R) Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS
Narrowband and Broadband High-Performance Amplifiers SATCOM Uplink Transmitters PCS/Cellular Low-Voltage High-Efficiency Output Amplifiers Medium-Haul Digital Radio Transmitters
Parameter Electrical Specifications
P1dB Gain Compression Maximum Stable Gain (S21/S12) Power Gain at P1dB (G1dB) Power-Added Efficiency (PAE) OIP3 Saturated Drain-Source Current (IDSS) Maximum Drain-Source Current (IMAX) Transconductance (GM) Gate-Source Leakage Current (IGSO) Pinch-Off Voltage (VP) Gate-Source Breakdown Voltage (VBDGS) Gate-Drain Breakdown Voltage (VBDGD) Thermal Resistivity (JC)
Min.
31.0 8.0 6.5
Specification Typ.
32.0 9.0 7.5 45 40 42
Max.
Unit
dBm dB dB % dBm dBm
Condition
VDS =8V, IDS =50% IDSS VDS =8V, IDS =50% IDSS VDS =8V, IDS =50% IDSS VDS =8V, IDS =50% IDSS, POUT =P1dB VDS =8V, IDS =50% IDSS Matched for optimal power, tuned for best IP3 VDS =1.3V, VGS =0V VDS =1.3V, VGS +1V VDS =1.3V, VGS =0V VGS =-5V VDS =1.3V, IDS =2.25mA IGS =2.25mA IGD =2.25mA VDS >6V
560
700 1125 600 10 |1.0|
825
mA mA ms A V V V C/W
|12.0| |14.5|
|14.0| |16.0| 30
Note: TAMBIENT =22C, RF specifications measured at f=12GHz using CW signal.
RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc.
Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 4
FPD2250
Absolute Maximum Ratings1
Parameter
Drain-Source Voltage (VDS) (-3VRating
10 -3 IDSS 20 26.5 175 -65 to 150 5.0 80
Unit
V V
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
mA dBm C C W %
Notes: 1TAMBIENT =22C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device. 2 Operating at absolute maximum VD continuously is not recommended. If operation at 10V is considered then IDS must be reduced in order to keep the part within its thermal power dissipation limits. Therefore VGS is restricted to <-0.5V. 3Total Power Dissipation to be de-rated as follows above 22C: P TOT =5.0(0.033W/C)xTHS, where THS =heatsink or ambient temperature above 22C. Example: For a 85C carrier temperature: PTOT =5.0-(0.033x(85-22))=2.9W 4 Total Power Dissipation (PTOT) defined as (PDC +PIN)-POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power. 5Users should avoid exceeding 80% of 2 or more Limits simultaneously. 6Thermal Resistivity specification assumes a Au/Sn eutectic die attach onto an Auplated copper heatsink or rib.
Pad Layout
Pad A1 A2 B1 B2 C Description Gate Pad Gate Pad Drain Pad Drain Pad Source Pad Pin Coordinates (m)
130, 460 130, 220 380, 450 380, 230
Note: Coordinates are referenced from the bottom left hand corner of the die to the center of the bond pad opening.
Die Size (m)
470x680
Die Thickness (m)
75
Min. Bond Pad Opening (mxm)
64x77
2 of 4
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A1 DS090612
FPD2250
Preferred Assembly Instructions
GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy onto the top face of the die. Ideally it should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150C for one hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. The gold-tin (80% Au 20% Sn) eutectic die attach has a melting point of approximately 280C but the absolute temperature being used depends on the leadframe material used and the particular application. The maximum time at used should be kept to a minimum. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4mm diameter gold wire be used. Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. Bond force, time stage temperature and ultrasonics are all critical parameters and the settings are dependent on the setup being used and application. Ultrasonic or thermosonic bonding is not recommended. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimized especially when making RF or ground connections.
Handling Precautions
To avoid damage to the devices, care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0V to 250V) using the human body model as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. This is an unpackaged part and therefore no MSL rating applies.
Application Notes and Design Data
Application Notes and design data including S-parameters and device model are available on request and from www.rfmd.com.
Reliability
An MTTF of 4.2 million hours at a channel temperature of 150C is achieved for the process used to manufacture this device.
Disclaimers
This product is not designed for use in any space-based or life-sustaining/supporting equipment.
Ordering Information
Delivery Quantity
Full Pack (100) Small Quantity (25) Sample Quantity (3)
Ordering Code
FPD2250-000 FPD2250-000SQ FPD2250-000S3
Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 4
FPD2250
4 of 4
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A1 DS090612

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